Method for manufacturing a semiconductor package and method for testing bonding strength of composite specimen

ABSTRACT

A method for manufacturing a semiconductor package includes the following steps. A semiconductor process is performed to form an encapsulated semiconductor device, wherein the encapsulated semiconductor device comprises an encapsulating material and a semiconductor device encapsulated by the encapsulating material. A testing apparatus including a holder body, a positioning mechanism and a force applying bar is provided. The encapsulated semiconductor device is clamed by the holder body. A clamping position of the encapsulated semiconductor device is adjusted by the positioning mechanism. The positioning mechanism is removed. A predetermined force is applied to a part of the encapsulated semiconductor device exposed by the holder body by the force applying bar. If the encapsulated semiconductor device is failed by the predetermined force, a process parameter of the semiconductor process is modified to form a modified encapsulated semiconductor device.

CROSS-REFERENCE TO RELATED APPLICATION

This is a divisional application of patent application Ser. No.16/392,599, filed on Apr. 23, 2019, which claims the priority benefit ofU.S. provisional application Ser. No. 62/737,114, filed on Sep. 27,2018. The entirety of the above-mentioned patent application is herebyincorporated by reference herein and made a part of this specification.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cell phones, digital cameras, and otherelectronic equipment. Semiconductor devices are typically fabricated bysequentially depositing insulating or dielectric layers, conductivelayers, and semiconductor layers of material over a semiconductorsubstrate, and patterning the various material layers using lithographyto form circuit components and elements thereon. Many integratedcircuits are typically manufactured on a single semiconductor wafer. Thedies of the wafer may be processed and packaged at the wafer level, andvarious technologies have been developed for wafer level packaging.

In molded electronic and electric parts containing inserting componentssuch as encapsulated semiconductor devices and resin insulatingtransformers, the interface between the resin and the insertingcomponent subjected to high residual stress due to the cure shrinkage ofthe resin and the coefficient of the thermal expansion mismatch betweenthe resin and the inserting components. These thermal stress sometimescauses delamination during operations of the components and reliabilitytests.

Such a delamination at adhering interfaces not only results in corrosionof electric wiring materials and electric insulating degradation, butalso causes a variety of other damages, such as cracking of the resinand wire breaking due to the stress concentration by the delamination.Therefore, the evaluation of bonding strength of a composite structureis therefore a critical issue in assuring the reliability of suchcomposite structure.

BRIEF DESCRIPTION OF THE DRAWINGS

The aspects of the present disclosure are best understood from thefollowing detailed description when read with the accompanying figures.It is noted that, in accordance with the standard practice in theindustry, various features are not drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1 illustrates a schematic view of a testing apparatus in accordancewith some embodiments.

FIG. 2 illustrates a partial cross-sectional view of an alignment holderin accordance with some embodiments.

FIG. 3 illustrates a partial cross-sectional view of an alignment holderin accordance with some embodiments.

FIG. 4 illustrates a schematic top view of a lower holder of analignment holder in accordance with some embodiments.

FIG. 5 illustrates a schematic view of an alignment holder in anintermediate stage of operation in accordance with some embodiments.

FIG. 6 illustrates a schematic view of a testing apparatus in a testingstage in accordance with some embodiments.

FIG. 7 illustrates a schematic view of a testing apparatus in a testingstage in accordance with some embodiments.

FIG. 8 illustrates a partial cross-sectional view of an alignment holderin accordance with some embodiments.

FIG. 9 illustrates a schematic view of a testing apparatus in a testingstage in accordance with some embodiments.

FIG. 10 illustrates a block diagram of a method for manufacturing asemiconductor package in accordance with some embodiments.

FIG. 11 illustrates a cross-sectional view of a semiconductor package inaccordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Other features and processes may also be included. For example, testingstructures may be included to aid in the verification testing of the 3Dpackaging or 3DIC devices. The testing structures may include, forexample, test pads formed in a redistribution layer or on a substratethat allows the testing of the 3D packaging or 3DIC, the use of probesand/or probe cards, and the like. The verification testing may beperformed on intermediate structures as well as the final structure.Additionally, the structures and methods disclosed herein may be used inconjunction with testing methodologies that incorporate intermediateverification of known good dies to increase the yield and decreasecosts.

FIG. 1 illustrates a schematic view of a testing apparatus in accordancewith some embodiments. FIG. 2 illustrates a partial cross-sectional viewof an alignment holder in accordance with some embodiments. With nowreference to FIG. 1 and FIG. 2, a testing apparatus 100 shown in FIG. 1is configured to test a bonding strength of a composite specimen 10. Insome embodiments, the composite specimen 10 may be a composite structureincluding multiple components bonding together, and the testingapparatus 100 is configured to test/measure the bonding strength betweenthe components around interfaces thereof. In some embodiments, thecomposite specimen 10 may be a semiconductor package including aplurality of components (e.g. encapsulation materials, through vias,semiconductor devices, etc.) bonding with one another, such that thecomposite specimen 10 includes a plurality of bonding interfaces. Thematerials of the plurality of components may be different from oneanother. For example, the composite specimen 10 may include IntegratedFan Out (InFO) packages, Chip on Wafer on Substrate (CoWoS) packages,flip chip packages and other semiconductor packages.

In some embodiments, for example, the composite specimen 10 may be anencapsulated semiconductor device, which includes a semiconductor device11 encapsulated by an encapsulating material 12, and a plurality ofthrough vias (conductive pillars) 13 surrounding the semiconductordevice 11 and extending through the encapsulating material 12 as shownin FIG. 1 and FIG. 2. The encapsulating material 12 reveals electricalterminals of the semiconductor device 11 and the end surfaces of thethrough vias 13. In the embodiments of the composite specimen 10 beingthe encapsulated semiconductor device, the composite specimen 10 may bein a wafer form. In some embodiments, the testing apparatus 100 areprovided to test/measure the bonding strength (i.e. delaminationdurability) of the composite specimen (encapsulated semiconductordevice) 10 at the bonding interfaces (e.g. bonding interfaces betweenthe encapsulation material 12 and the through vias 13, bondinginterfaces between encapsulation material 12 and the semiconductordevice 11, etc.) thereof.

In some embodiments, the materials of the components in the compositespecimen 10 may be different from one another. For example, the materialof the encapsulating material 12 may include epoxy or other suitableresins. In some embodiments, the encapsulating material 12 may be epoxyresin containing chemical filler. The material of a substrate of thesemiconductor device 11 may include bulk silicon, doped or undoped, oran active layer of a silicon-on-insulator (SOI) substrate. Generally, anSOI substrate includes a layer of a semiconductor material such assilicon, germanium, silicon germanium, SOI, silicon germanium oninsulator (SGOI), or combinations thereof. Other substrates that may beused include multi-layered substrates, gradient substrates, or hybridorientation substrates. The material of the through vias 13 may includea copper (Cu) and/or a copper-based alloy, etc. In some embodiments, thematerials of some components in the composite specimen 10 may be thesame, and the testing apparatus 100 is also configured for testing thebonding strength between the components with the same materials.

In some embodiments, the testing apparatus 100 includes an alignmentholder 105 for holding the composite specimen 10 and a force applyingbar 140 for applying a force to the composite specimen 10. In someembodiments, the alignment holder 105 includes a holder body 110 and apositioning mechanism 130. The holder body 110 is configured to clamp afirst side (e.g. right side) of the composite specimen 10. In one of theimplementations, the holder body 110 may include an upper holder 112 anda lower holder 114, and the first side of the composite specimen 10 isconfigured to be disposed between the upper holder 112 and the lowerholder 114. In some embodiments, the holder body 110 may further includea locking member 118. The locking member 118 is coupled between theupper holder 112 and the lower holder 114, and a distance G1 between theupper holder 112 and the lower holder 114 can be adjusted by the lockingmember 118. For instance, the locking member 118 can be a screw. Theupper holder 112 and the lower holder 114 each has a threaded holecorrespondingly. As such, the distance G1 between the upper holder 112and the lower holder 114 can be adjusted according to how deep thelocking member 118 is screwed into the threaded holes of the upperholder 112 and the lower holder 114.

FIG. 3 illustrates a partial cross-sectional view of an alignment holderin accordance with some embodiments. FIG. 4 illustrates a schematic topview of a lower holder of an alignment holder in accordance with someembodiments. With now reference to FIG. 3 and FIG. 4, in someembodiments, the holder body 110 may further include a groove 1141 forreceiving the composite specimen 10. In accordance with some embodimentsof the disclosure, the groove 1141 crosses over the lower holder 114 asshown in FIG. 3 and FIG. 4, such that the composite specimen 10 isconfigured to be moved along a moving direction D1 within the groove1141. In other words, the groove 1141 may be functioned as a slidingrail for the composite specimen 10 to slide relatively to the holderbody along the groove 1141. With such arrangement, the upper holder 112and the lower holder 114 may be in contact with each other when clampingthe composite specimen 10. In other embodiments, the groove 1141 may bedisposed on the upper holder 112 and/or the lower holder 114 to befunctioned as the sliding rail for the composite specimen 10. The depthof the groove 1141 can be adjusted according to actual requirements,such as the thickness of the composite specimen 10, the configuration ofthe holder body 110, etc.

FIG. 5 illustrates a schematic view of an alignment holder in anintermediate stage of operation in accordance with some embodiments.With now reference to FIG. 1 and FIG. 5, in some embodiments, thealignment holder 105 may further include a supporter 120 detachablyconnected to a lower part of the holder body 110 for supporting a lowersurface of the composite specimen 10. In some embodiments, the supporter120 may be detachably connected to the lower holder 114. In accordancewith some embodiments of the disclosure, the supporter 120 is detachablyconnected to the lower holder 114 through mechanical engagement. Forexample, the supporter 120 may include at least one protrusion (e.g. theprotrusion 122 illustrated in in FIG. 5), and the lower holder 114 maycorrespondingly include at least one concave (e.g. the concave 1142illustrated in in FIG. 5). With such arrangement, the supporter 120 canbe detachably connected to the lower holder 114 through the engagementof the protrusion 122 of the supporter 120 and the concave 1142 of thelower holder 114, but the disclosure is not limited thereto. Any form ofmechanical engagement or any suitable connections may be applied to thesupporter 120 and the lower holder 114. In alternative embodiments, thesupporter 120 may be detachably connected to the lower holder 114through magnetic force. For example, the supporter 120 and the lowerholder 114 may each include a magnetic component, and the magneticcomponents in the supporter 120 and the lower holder 114 are configuredto be attracted to each other.

In some embodiments, the supporter 120 can be firstly attached(connected) to the lower holder 114 when the composite specimen 10 isplaced between the upper holder 112 and the lower holder 114, so thelower surface of the composite specimen 10 can lean on the supporter 120for holding and supporting the composite specimen 10 in place. Then,when the composite specimen 10 is adjusted to a desired clampingposition, the distance G1 between the upper holder 112 and the lowerholder 114 can be adjusted (shortened) by, for example, screwing thelocking member 118 into the threaded holes of the upper holder 112 andthe lower holder 114. That is to say, the tightness of the holder body110 for clamping the composite specimen 10 can be controlled by thelocking member 118, so as to hold the composite specimen 10 in place.

With now reference to FIG. 1, in some embodiments, the positioningmechanism 130 is configured to lean against a second side (e.g. leftside) of the composite specimen 10 and move relatively to the holderbody 110 for adjusting a clamping position of the composite specimen 10clamped by the holder body 110. In some embodiments, the holder body 110may further include a base 116. The upper holder 112 and the lowerholder 114 are disposed on the base 116, and the positioning mechanism130 is movably coupled to the base 116. In accordance with someembodiments of the disclosure, the positioning mechanism 130 includes atleast one positioning rod 132 (two positioning rods 132 are illustratedherein, but not limited thereto) and a positioning plate 134 coupled tothe positioning rod 132. Correspondingly, the base 116 includes at leastone positioning hole 1161 (two positioning holes 1161 are illustratedherein, but not limited thereto), and the positioning rods 132 aremovably engaged with the positioning holes 1161 respectively. Thepositioning plate 134 is configured to lean against a second side (e.g.left side) of the composite specimen 10 and move along with thepositioning rod 132. For example, the positioning holes 1161 may bethreaded holes, and the positioning rods 132 may be threaded rods. Assuch, one end of the positioning rod 132 may penetrate the positioningplate 134 and another end of the positioning rod 132 is screwed into thepositioning holes 1161, so that the positioning rod 132 is configured todrive the positioning plate 134 to move toward or away from the holderbody 110. In some embodiments, a nub 136 may be disposed on a cantileverend of each positioning rod 132 to facilitate the operation of thepositioning rod 132.

With now reference to FIG. 2, in accordance with some embodiments of thedisclosure, a length L1 of the supporter 120 is substantially shorterthan a length L2 of the composite specimen 10 exposed by the upperholder 112 and the lower holder 114 of the holder body 110. Accordingly,the positioning mechanism 130 is capable of pushing the second side ofthe composite specimen 10 toward the holder body 110 without interferingwith the supporter 120. In some embodiments, the positioning mechanism130 is configured to lean against the second side of the compositespecimen 10, which is opposite to the first side of the compositespecimen 10 where the upper holder 112 and the lower holder 114 areclamped.

FIG. 6 illustrates a schematic view of a testing apparatus in a testingstage in accordance with some embodiments. With now reference to FIG. 1and FIG. 6, with such arrangement, when a user want to adjust theclamping position of the composite specimen 10, the user may just simplyrotate the nubs 136 along the rotating direction R1 to screw thepositioning rods 132 into the positioning holes 1161. Accordingly, thepositioning plate 134 is driven to move along with the positioning rods132, and pushes the composite specimen 10 to move toward the holder body110. When the composite specimen 10 is moved to a desired clampingposition, the user just simply stops the rotation of the nub 136 andscrews the locking member 118 further into the upper holder 112 and thelower holder 114 to lock the composite specimen 10 in place. Then, thepositioning mechanism 130 may be removed by rotate the nub 136conversely to unscrew the positioning rods 132 from the positioningholes 1161. The supporter 120 may also be removed by, for example,disengaging the supporter 120 from the lower holder 114. Then, a forcemay be applied to a part of the composite specimen 10 by a forceapplying bar 140 to test the bonding strength of the composite specimen10. In some embodiments, the force applying bar 140 may be a cantileverbeam. In some embodiments, the cantilever end of the force applying bar140 is configured for abutment with an upper surface of the compositespecimen 10 to apply force thereon. Therefore, the positioning and thealignment of the composite specimen 10 can be well controlled by theupper holder 112, the lower holder 114 and the positioning mechanism130, and manual error and false test result caused by shift ormisalignment of the composite specimen 10 can be avoided.

With now reference to FIG. 2, in accordance with some embodiments of thedisclosure, the upper holder 112 includes an inclined surface 1121 at atip of the upper holder 112 for aligning with the first side of thecomposite specimen 10. In some embodiments, the upper holder 112 may bea wedge block. With such arrangement, the view angle of the user wouldnot be blocked by the upper edge of the upper holder 112, so the usermay have better observation on the composite specimen 10 during theadjusting of the clamping position of the composite specimen 10.

In accordance with some embodiments of the disclosure, the force may beapplied to an interface between two components of the composite specimen10 by the force applying bar 140. In some embodiments, the forceapplying bar 140 is configured to move toward the composite specimen 10along a direction perpendicular to a surface (e.g. an upper surface) ofthe composite specimen 10. For example, the force may be applied on anupper surface at the interface between the encapsulating material 12 andthe semiconductor device 11 or the interface between the encapsulatingmaterial 12 and the through vias 13. Accordingly, the bonding strengthbetween the encapsulating material 12 and the semiconductor device 11and the bonding strength between the encapsulating material 12 and thethrough vias 13 can be tested/measured. As such, bonding strength(delamination durability) can be determined by measuring the appliedforce during an increment of delamination growth at the interface. Withthe application of the alignment holder 105, the clamping position canbe well controlled to expose the interface to be tested withoutshifting, so the force can be applied to the interface of the compositespecimen 10 precisely. For example, the composite specimen 10 is firstlyclamped by the holder body 110, and then pushed toward the holder body110 by the positioning mechanism 130 to adjust the clamping positionmore precisely, so as to avoid or reduce misalignment (positionshifting) of the composite specimen 10 resulting from manual placementof the composite specimen 10. As such, accuracy of testing result of thetesting apparatus 100 can be improved.

In accordance with some embodiments of the disclosure, for a bendingtest, the force applying bar 140 is moved along a direction from theupper holder 112 toward the lower holder 114 to apply a bending forcetoward the composite specimen 10. In some embodiments, a longitudinalaxis μl of the force applying bar 140 is substantially perpendicular toan applying surface (e.g. the upper surface) of the composite specimen10, and the bending force is applied by the tip of the force applyingbar 140 as it is shown in FIG. 6.

FIG. 7 illustrates a schematic view of a testing apparatus in a testingstage in accordance with some embodiments. With now reference to FIG. 7,in accordance with some embodiments of the disclosure, for a shear test,after the positioning mechanism 130 and the supporter 120 are removed,the holder body 110 can be placed in an upright position as it is shownin FIG. 7. As such, the composite specimen 10 clamped by the holder body110 is also in an upright position. Accordingly, the longitudinal axisμl of the force applying bar 140 is substantially parallel to anapplying surface (e.g. lower surface) of the composite specimen 10, andthe shear stress is applied by the side surface of the force applyingbar 140 as it is shown in FIG. 7. In the embodiments of performing theshear test, the force applying bar 140 is moved along a direction fromthe lower holder 114 toward the upper holder 112 to apply a shear stresstoward the composite specimen 10. Therefore, the alignment holder 105provides the testing apparatus 100 more precision in alignment and moreflexibility in operation of tests. With such arrangement, the alignmentholder 105 and the testing apparatus 100 having the alignment holder 105are capable of performing a bending test, a shear test, a scratch test,an indent test, or any other suitable tests that includes alignment andforce application. Therefore, the application of the testing apparatus100 having the alignment holder 105 is more versatile and the alignmentof the composite specimen 10 and the testing result can be more precise.

In accordance with some embodiments of the disclosure, the compositespecimen 10′ may be an encapsulated semiconductor device, which includesa first semiconductor device 11, a second semiconductor device 14, afirst encapsulating material 12 a, and a second encapsulating material12 b. In some embodiments, the first semiconductor device 11 isencapsulated by the first encapsulating material 12 a, and the secondsemiconductor device 14 is encapsulated by the second encapsulatingmaterial 12 b. The first encapsulating material 12 a and the secondencapsulating material 12 b are bonded with each other. In someembodiments, the structure of the first semiconductor device 11encapsulated by the first encapsulating material 12 a, and the structureof the second semiconductor device 14 encapsulated by the secondencapsulating material 12 b may be formed in separate steps.

For example, the structure of the first semiconductor device 11encapsulated by the first encapsulating material 12 a may be pre-formedand provided, and the second encapsulating material 12 b is then formedto encapsulate the second semiconductor device 14 and bonding with thefirst encapsulating material 12 a. In some embodiments, the firstencapsulating material 12 a and the second encapsulating material 12 bmay be over molding to cover the first semiconductor device 11 and thesecond semiconductor device 14. Then, a planarizing process may beperformed on the first encapsulating material 12 a and the secondencapsulating material 12 b to reveal the first semiconductor device 11and the second semiconductor device 14. The planarizing process mayinclude mechanical grinding or chemical mechanical polishing (CMP), forexample. After the grinding process, a cleaning step may be optionallyperformed, for example, to clean and remove the residue generated fromthe grinding step. However, the disclosure is not limited thereto, andthe planarizing step may be performed through any other suitable method.

With such arrangement, the force may be applied to the interface betweenthe first semiconductor device 11 and the first encapsulating material12 a, the interface between the second semiconductor device 14 and thesecond encapsulating material 12 b, and the interface between the firstencapsulating material 12 a and the second encapsulating material 12 bto test the bonding strength thereof. In some embodiments, the materialsof the first encapsulating material 12 a and the second encapsulatingmaterial 12 b may be the same. For example, the material of the firstencapsulating material 12 a and the second encapsulating material 12 bmay include epoxy or other suitable resins. In some embodiments, thefirst encapsulating material 12 a and the second encapsulating material12 b may be epoxy resin containing chemical filler. In alternativeembodiments, the materials of the first encapsulating material 12 a andthe second encapsulating material 12 b may be different from each other.The first semiconductor device 11 and/or the second semiconductor device14 may be high bandwidth memory (HBM) dies, or any other suitablesemiconductor devices. In some embodiments, at least one of the firstsemiconductor device 11 and the second semiconductor device 14 may be adummy die merely for testing purpose, so as to further reduce the costfor testing.

In accordance with some embodiments of the disclosure, for a bendingtest, the force applying bar 140 can be moved along a direction from theupper holder 112 toward the lower holder 114 to apply a bending forcetoward the composite specimen 10. In some embodiments, the longitudinalaxis of the force applying bar 140 is substantially perpendicular to anapplying surface (e.g. the upper surface) of the composite specimen 10′,and the bending force is applied by the tip of the force applying bar140 as it is shown in FIG. 8.

FIG. 9 illustrates a schematic view of a testing apparatus in a testingstage in accordance with some embodiments. With now reference to FIG. 9,in accordance with some embodiments of the disclosure, for a shear test,after the positioning mechanism 130 and the supporter 120 are removed,the holder body 110 can be placed in an upright position as it is shownin FIG. 9. As such, the composite specimen 10′ clamped by the holderbody 110 is also in an upright position. Accordingly, the longitudinalaxis of the force applying bar 140 is substantially parallel to anapplying surface (e.g. lower surface) of the composite specimen 10′, andthe shear stress is applied by the side surface of the force applyingbar 140 as it is shown in FIG. 9. In the embodiments of performing theshear test, the force applying bar 140 is moved along a direction fromthe lower holder 114 toward the upper holder 112 to apply a shear stresstoward the composite specimen 10′. In general, the composite specimen10′ including the first encapsulating material 12 a and the secondencapsulating material 12 b bonding with each other is easily to crackat the lower surface of the composite specimen 10′ when subjected tohigh residual stress due to, for example, cure shrinkage of theencapsulating materials 12 a, 12 b. Therefore, the shear test as it isshown in FIG. 9 is inevitable for the composite specimen 10′.

In accordance with some embodiments of the disclosure, the alignmentholder 105 provides the testing apparatus 100 more precision inalignment and more flexibility in operation of tests. With sucharrangement, the alignment holder 105 and the testing apparatus 100having the alignment holder 105 are capable of performing a bendingtest, a shear test, a scratch test, an indent test, or any othersuitable tests that includes alignment and force application.

With now reference to FIG. 1, FIG. 10 and FIG. 11, in accordance withsome embodiments of the disclosure, the method for manufacturing asemiconductor package 50 as shown in FIG. 11 may include the followingsteps. It is noted that the following description is illustratedregarding the embodiment of the method is applied to the compositespecimen (encapsulated semiconductor device) 10 shown in FIG. 1, but thedisclosure is not limited thereto. It should be understood that themethod and the testing apparatus 100 might also be applied to anysuitable specimens.

First, performing step S110, an encapsulated semiconductor device 10including an encapsulating material 12 and a semiconductor device 11encapsulated by the encapsulating material 12 is provided. In someembodiments, the encapsulated semiconductor device 10 is formed by asemiconductor process. Such semiconductor process may include providinga semiconductor device 11 and a plurality of through vias (conductivepillars) 13 and then providing an encapsulating material 12 toencapsulate the semiconductor device 11 and the conductive pillars 13.In some embodiments, the semiconductor device 11 and the through vias(conductive pillars) 13 may be provided on a carrier (not shown), andthe carrier may be removed during the sequential testing process. Insome embodiments, the carrier may be a glass carrier, a ceramic carrier,or the like. The conductive pillars 13 may be pre-formed, and are thenplaced on the carrier. In alternative embodiments, the conductivepillars 13 may be formed by, for example, plating process. The platingof the conductive pillars 130 may be performed before the placement ofthe semiconductor device 11. In some embodiments, the encapsulatingmaterial 12 may include a molding compound, an epoxy, or a resin, etc.In some embodiments, a thinning process, which may be a grindingprocess, may be optionally performed to thin the encapsulating material12 for revealing the through vias 13 and electrical terminals of thesemiconductor device 11.

Then, performing step S120, a testing apparatus 100 including a holderbody 110, a positioning mechanism 130 and a force applying bar 140 as itis shown in FIG. 1 is provided. The testing apparatus 100 is provided totest/measure the bonding strength (i.e. delamination durability) of theencapsulated semiconductor device 10 at the bonding interfaces (e.g.bonding interfaces between the encapsulation material 12 and the throughvias 13, bonding interfaces between encapsulation material 12 and thesemiconductor device 11, etc.) thereof.

Then, performing step S130, a first side of the encapsulatedsemiconductor device (composite specimen) 10 is clamped by the holderbody 110. In some embodiments, the first side (e.g. the right side) ofthe encapsulated semiconductor device 10 is placed between the upperholder 112 and the lower holder 114 of the holder body 110. In theembodiments of the testing apparatus 100 having a stopper 120 shown inFIG. 1, the supporter 120 can be firstly attached (connected) to thelower holder 114 before the encapsulated semiconductor device 10 isplaced between the upper holder 112 and the lower holder 114. Thereby,the lower surface of the encapsulated semiconductor device 10 can leanon the supporter 120 for holding and supporting the encapsulatedsemiconductor device 10 in place. In some embodiments, the supporter 120can be detachably connected to the lower holder 114 by mechanicalengagement, magnetic force, or any suitable means.

Then, performing step S140, the clamping position of the encapsulatedsemiconductor device 10 is adjusted by the positioning mechanism 130.For example, in some embodiments, a second side of the encapsulatedsemiconductor device 10 is pushed toward the holder body 110 by thepositioning mechanism 130 for adjusting the clamping position of theencapsulated semiconductor device 10. In some embodiments, thepositioning mechanism 130 leans against the second side (e.g. left side)of the encapsulated semiconductor device 10 opposite to the first sidewhere the holder body 110 is clamped, and configured to pushes thesecond side of the encapsulated semiconductor device 10 toward theholder body 110 in a controllable way. When the encapsulatedsemiconductor device 10 is pushed and adjusted to a desired clampingposition, the upper holder 112 and the lower holder 114 can be lockedby, for example, screwing the locking member 118 into the threaded holesof the upper holder 112 and the lower holder 114. That is to say, thetightness of the holder body 110 for clamping the encapsulatedsemiconductor device 10 can be controlled by the locking member 118, soas to hold the encapsulated semiconductor device 10 in place. In otherembodiments, the upper holder 112 and the lower holder 114 can beconnected by an elastic piece, so as to clamp the encapsulatedsemiconductor device 10 in place.

Then, performing step S150, the positioning mechanism 130 may beremoved. In some embodiments, the positioning mechanism 130 may beremoved from the holder body by, for example, unscrewing the positioningrods 132 of the positioning mechanism 130 from the positioning holes1161 of the holder body. In the embodiments of the testing apparatus 100having the supporter 120, the supporter 120 may also be removed by, forexample, disengaging the supporter 120 from the lower holder 114.

Then, performing step S160, a predetermined force may be applied to apart of the encapsulated semiconductor device 10 by a force applying bar140 to test the bonding strength of the encapsulated semiconductordevice 10. In some embodiments, the force may be applied to an interfacebetween two bonding components of the encapsulated semiconductor device10 by the force applying bar 140. For example, the predetermined forcemay be applied at the interface between the encapsulating material 12and the semiconductor device 11 or the interface between theencapsulating material 12 and the through vias 13. Accordingly, thebonding strength between the encapsulating material 12 and thesemiconductor device 11 and the bonding strength between theencapsulating material 12 and the through vias 13 can be tested andmeasured. With the application of the alignment holder 105, thealignment holder 105 can be well controlled to hold the encapsulatedsemiconductor device 10 and expose the interface to be tested, so theforce can be applied to the interface of the encapsulated semiconductordevice 10 precisely without shifting. Accordingly, the positioning andthe alignment of the encapsulated semiconductor device 10 can be wellcontrolled by the upper holder 112, the lower holder 114 and thepositioning mechanism 130, and manual error and false test result causedby shift or misalignment of the encapsulated semiconductor device 10 canbe avoided.

Then, performing step S160, if the encapsulated semiconductor device 10is failed by the predetermined force applied by the force applying bar140, a process parameter of the semiconductor process is modified toform a modified encapsulated semiconductor device 10 a. In someembodiments, if the bonding strength between the interfaces of theencapsulated semiconductor device 10 does not meet the requirement, whenthe predetermined force is applied onto the encapsulated semiconductordevice 10 by the force applying bar 140, the encapsulated semiconductordevice 10 may fail (e.g. crack, or deform, etc.) around the interfaces.As such, process parameters of the semiconductor process for forming theencapsulated semiconductor device 10 may be modified to form themodified encapsulated semiconductor device 10 a. For example, processparameters may include curing temperature of the encapsulating material12, reactant concentrations of plating process for forming theconductive pillars 13 and/or conductors of the semiconductor device 11,etc. The testing process may be repeated until the bonding strength ofthe modified encapsulated semiconductor device meets the requirement,and then sequential process (e.g. forming a redistribution structure 20over the modified encapsulated semiconductor device 10 a, etc.) may beperformed on the modified encapsulated semiconductor device to form thesemiconductor package 50. Certainly, if the bonding strength of theencapsulated semiconductor device 10 meets the requirement in the firstplace, the sequential process (e.g. forming a redistribution structure20 over the encapsulated semiconductor device 10, etc.) may be performedon the encapsulated semiconductor device 10 to form the semiconductorpackage 50 without modifying any process parameters.

In some embodiments, for the sequential process, the redistributionstructure 20 may be formed over the encapsulating material 12 and thesemiconductor device 11 and electrically connected to the semiconductordevice 11 and the through vias 13 of the encapsulated semiconductordevice 10/10 a. The redistribution structure 140 may be formed by, forexample, depositing conductive layers, patterning the conductive layersto form redistribution circuits 21, partially covering theredistribution circuits 21 and filling the gaps between theredistribution circuits 21 with dielectric layers 22, etc. The materialof the redistribution circuits 21 may include a metal or a metal alloyincluding aluminum, copper, tungsten, and/or alloys thereof. Thedielectric layers 22 may be formed of dielectric materials such asoxides, nitrides, carbides, carbon nitrides, combinations thereof,and/or multi-layers thereof. The redistribution circuits 21 are formedin the dielectric layers 22 and electrically connected to thesemiconductor device 11 and the through vias 13. In addition, an UnderBump Metallurgy (UBM) layer 23 may be formed on the redistributionstructure 20 by sputtering, evaporation, or electroless plating, etc.

Then, a plurality of electrical connectors 30 and at least oneIntegrated Passive Device (IPD) 32 are disposed on the redistributionstructure 20 in accordance with some exemplary embodiments. Theformation of the electrical connectors 30 may include placing solderballs on the UBM layer 23 (or on the redistribution structure 20), andthen reflowing the solder balls. In alternative embodiments, theformation of the electrical connectors 30 may include performing aplating process to form solder regions on the UBM layer 23 (or on theredistribution structure 20), and then reflowing the solder regions. Theelectrical connectors 30 may also include conductive pillars, orconductive pillars with solder caps, which may also be formed throughplating. The IPD 32 may be fabricated using standard wafer fabricationtechnologies such as thin film and photolithography processing, and maybe mounted on the redistribution structure 20 through, for example,flip-chip bonding or wire bonding, etc.

In accordance with some embodiments of the disclosure, the method andthe testing apparatus for testing the bonding strength of theencapsulated semiconductor device 10 can be applied once theencapsulating material 12 is formed (i.e. molding process). In otherwords, the delamination durability of the encapsulated semiconductordevice 10 can be obtained once the molding process is performed insteadof waiting until the whole semiconductor package process is finished.That is to say, the testing method and the testing apparatus can beapplied to the encapsulated semiconductor device 10 instead of beingapplied to the semiconductor package, which may include the encapsulatedsemiconductor device, and redistribution structure, etc. Thereby, thedelamination durability of the encapsulated semiconductor device 10 canbe obtained more instantaneously, so as to modify recipe of theencapsulated semiconductor device 10 to prevent the risk of delaminationimmediately rather than having to wait until the whole semiconductorpackage process is finished. Therefore, the product cost can be reducedand the process efficiency can be improved.

Based on the above discussions, it can be seen that the presentdisclosure offers various advantages. It is understood, however, thatnot all advantages are necessarily discussed herein, and otherembodiments may offer different advantages, and that no particularadvantage is required for all embodiments.

In accordance with some embodiments of the disclosure, an alignmentholder for holding a composite specimen includes a holder body, asupporter, and a positioning mechanism. The holder body is configured toclamp a first side of the composite specimen. The supporter isdetachably connected to a lower part of the holder body for supporting alower surface of the composite specimen. The positioning mechanism isconfigured to lean against a second side of the composite specimen andmove relatively to the holder body for adjusting a clamping position ofthe composite specimen clamped by the holder body.

In accordance with some embodiments of the disclosure, a testingapparatus for testing a bonding strength of a composite specimenincludes a holder body, a positioning mechanism, and a force applyingbar. The holder body is configured to clamp a first side of thecomposite specimen. The positioning mechanism is movably coupled to theholder body, wherein the positioning mechanism is configured to leanagainst a second side of the composite specimen and move relatively tothe holder body for adjusting a clamping position of the compositespecimen clamped by the holder body. The force applying bar isconfigured to apply a force to a part of the composite specimen exposedby the holder body.

In accordance with some embodiments of the disclosure, a method formanufacturing a semiconductor package includes the following steps. Asemiconductor process is performed to form an encapsulated semiconductordevice, wherein the encapsulated semiconductor device comprises anencapsulating material and a semiconductor device encapsulated by theencapsulating material. A testing apparatus including a holder body, apositioning mechanism and a force applying bar is provided. Theencapsulated semiconductor device is clamed by the holder body. Aclamping position of the encapsulated semiconductor device is adjustedby the positioning mechanism. The positioning mechanism is removed. Apredetermined force is applied to a part of the encapsulatedsemiconductor device exposed by the holder body by the force applyingbar. If the encapsulated semiconductor device is failed by thepredetermined force, a process parameter of the semiconductor process ismodified to form a modified encapsulated semiconductor device.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method for manufacturing a semiconductorpackage, comprising: performing a semiconductor process to form anencapsulated semiconductor device; providing a testing apparatuscomprising a holder body, a positioning mechanism and a force applyingbar; clamping the encapsulated semiconductor device by the holder body;adjusting a clamping position of the encapsulated semiconductor deviceby the positioning mechanism; removing the positioning mechanism;applying a predetermined force to a part of the encapsulatedsemiconductor device exposed by the holder body by the force applyingbar.
 2. The method as claimed in claim 1, further comprising: providinga supporter on a lower part of the holder body, wherein the encapsulatedsemiconductor device lean on the supporter when clamped by the holderbody.
 3. The method as claimed in claim 1, further comprising: removingthe supporter before the force is applied to the part of theencapsulated semiconductor device exposed by the holder body.
 4. Themethod as claimed in claim 1, wherein performing the semiconductorprocess to form the encapsulated semiconductor device furthercomprising: providing a semiconductor device and a plurality of throughvias on a carrier; providing an encapsulating material to encapsulatethe semiconductor device and the through vias; and removing the carrier.5. The method as claimed in claim 4, wherein the predetermined force isapplied at an interface between the encapsulating material and thesemiconductor device.
 6. The method as claimed in claim 4, wherein thepredetermined force is applied at an interface between the encapsulatingmaterial and the through vias.
 7. The method as claimed in claim 1,further comprising: when the encapsulated semiconductor device is failedby the predetermined force, modifying a process parameter of thesemiconductor process to form a modified encapsulated semiconductordevice.
 8. The method as claimed in claim 7, further comprising: if themodified encapsulated semiconductor device stands the test of thepredetermined force, forming a redistribution structure over themodified encapsulated semiconductor device.
 9. A method for testing abonding strength of a composite specimen, comprising: clamping a firstside of the composite specimen by a holder body; pushing a second sideof the composite specimen toward the holder body by a positioningmechanism for adjusting a clamping position of the composite specimen,wherein the second side is opposite to the first side; removing thepositioning mechanism; and applying a force to a part of the compositespecimen exposed by the holder body.
 10. The method as claimed in claim9, further comprising: disposing a supporter on a lower part of theholder body, wherein the composite specimen lean on the supporter whenclamped by the holder body.
 11. The method as claimed in claim 9,further comprising: removing the supporter before the force is appliedto the part of the composite specimen exposed by the holder body. 12.The method as claimed in claim 9, wherein the holder body comprises anupper holder and a lower holder, and the first side of the compositespecimen is configured to be clamped between the upper holder and thelower holder.
 13. The method as claimed in claim 12, wherein clampingthe first side of the composite specimen by the holder body furthercomprising: disposing the first side of the composite specimen betweenthe upper holder and the lower holder; and adjusting a distance betweenthe upper holder and the lower holder by a locking member coupledbetween the upper holder and the lower holder.
 14. The method as claimedin claim 9, wherein the composite specimen is configured to be movedalong a groove extending across the holder body.
 15. The method asclaimed in claim 9, wherein the force is applied to a bonding interfacebetween a plurality of components of the composite specimen.
 16. Themethod as claimed in claim 9, wherein applying the force to the part ofthe composite specimen exposed by the holder body further comprises:applying the force by a tip of a force applying bar, wherein alongitudinal axis of the force applying bar is substantiallyperpendicular to an applying surface of the composite specimen.
 17. Themethod as claimed in claim 9, wherein applying the force to the part ofthe composite specimen exposed by the holder body further comprises:applying the force by a side surface of a force applying bar, wherein alongitudinal axis of the force applying bar is substantially parallel toan applying surface of the composite specimen.
 18. A method for testinga bonding strength of a composite specimen, comprising: clamping a sideof the composite specimen by a holder body; pushing an opposite side ofthe composite specimen toward the holder body to a testing position by apositioning mechanism couple to the holder body; removing thepositioning mechanism; and applying a force to a bonding interfacebetween a plurality of components of the composite specimen exposed bythe holder body.
 19. The method as claimed in claim 18, furthercomprising: connecting a supporter to the lower holder for supporting alower surface of the composite specimen before the second side of thecomposite specimen is pushed toward the holder body by the positioningmechanism.
 20. The method as claimed in claim 18, further comprising:removing the supporter before the force is applied to the compositespecimen.